Determination of Inversion Temperature of Sb2O3-Doped BaTiO3 Positive Temperature Coefficient of Resistivity (PTCR) Ceramics by the Finite Difference Method期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Determination of Inversion Temperature of Sb₂O₃-Doped BaTiO₃ Positive Temperature Coefficient of Resistivity (PTCR) Ceramics by the Finite Difference Method

Authors:	Hong-Soo Kim Gun Yong Sung Chong Hee Kim

Affiliation:	Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea;Electronics and Telecommunications Research Institute, Taejon, Korea;Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Korea

Abstract:	The effect of the cooling rate on the PTCR (positive temperature coefficient of resistivity) characteristics of 0.1 mol% Sb₂O₃-doped BaTiO₃ ceramics has been investigated. Resistances both below and above the Curie temperature were increased by slow cooling, which indicated that the resistive layer width at the grain boundary increased as the cooling rate decreased. Concentration profiles of the Ba vacancies as a function of distance from the grain boundary have been simulated by the finite difference method. The inversion temperature of the 0.1 mol% Sb₂O₃-doped BaTiO₃ system was determined to be 1160°C from the measured electrical properties and computed concentration profiles.

Keywords:	positive temperature coefficient of resistivity vacancies barium temperature cooling