| GaN基HEMT电流崩塌现象相关的表面陷阱效应 |
| |
| 引用本文： | 罗谦,杜江锋,卢盛辉,周伟,夏建新,于奇,杨谟华. GaN基HEMT电流崩塌现象相关的表面陷阱效应[J]. 固体电子学研究与进展, 2008, 28(1): 24-28 |
| |
| 作者姓名： | 罗谦 杜江锋 卢盛辉 周伟 夏建新 于奇 杨谟华 |
| |
| 作者单位： | 电子科技大学微电子学与固体电子学学院,成都,610054 |
| |
| 摘 要： | 采用脉冲测试方法研究了与GaN基HEMT电流崩塌相关的表面陷阱效应。对特制的无台面器件进行的实验证实了表面陷阱之间存在输运过程。数据表明,当栅应力持续时间足够长时,被充电的表面陷阱会达到某种稳态。该稳态是包含了陷阱俘获与释放过程的动态平衡态。
|
| 关 键 词： | 氮化镓 表面态 电流崩塌 |
| 文章编号： | 1000-3819(2008)01-024-05 |
| 修稿时间： | 2006-06-21 |
A Study on the Surface Trapping Process Related to the Current Collapse in the GaN Based HEMT by a New Measurement Method |
| |
| LUO Qian,DU Jiangfeng,LU Shenghui,ZHOU Wei,XIA Jianxin,YU Qi,YANG Mohua. A Study on the Surface Trapping Process Related to the Current Collapse in the GaN Based HEMT by a New Measurement Method[J]. Research & Progress of Solid State Electronics, 2008, 28(1): 24-28 |
| |
| Authors: | LUO Qian DU Jiangfeng LU Shenghui ZHOU Wei XIA Jianxin YU Qi YANG Mohua |
| |
| Affiliation: | LUO Qian DU Jiangfeng LU Shenghui ZHOU Wei XIA Jianxin YU Qi YANG Mohua(School of Microelectronics , Solid-state Electronics,University of Electronics Science , Technology of China,Chengdu,610054,CHN) |
| |
| Abstract: | The surface traping process related to current collapes in GaN based HEMT is investigated by a new measurement method.A special AlGaN/GaN HEMT without mesa fabrication is designed for this study.the experimental results confirm the existence of the surface transport process.The data analysis indicates that there is a dynamic equilibrium of the chraged surface while the stress is applied for enough time. |
| |
| Keywords: | GaN surface state current collapse |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
