| SiC MESFET反向截止漏电流的研究 |
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| 引用本文： | 崔现锋,潘宏菽.SiC MESFET反向截止漏电流的研究[J].半导体技术,2010,35(8):784-786. |
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| 作者姓名： | 崔现锋 潘宏菽 |
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| 作者单位： | 河北半导体研究所,石家庄,050051;河北半导体研究所,石家庄,050051 |
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| 摘 要： | 给出了一种减小SiC MESFET栅漏反向截止漏电流的工艺方法,通过采用LPCVD淀积厚SiO2和高温氧化工艺,使器件的性能得到一定的提升.从实验数据看出,器件在S波段工作时,器件的反向截止漏电流大幅度下降,且分散性得到改善,其功率附加效率和功率增益也分别提高了10%和1.5 dB.该方法充分发挥了SiC材料能形成自身氧化层的优势,结合Si工艺的特点,减小了氧化层的缺陷,并在一定程度上减小了器件的寄生电容.
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| 关 键 词： | 反向截止漏电流 碳化硅金属外延半导体场效应晶体管 氧化 低压化学气相淀积 |
Study on Off-Set Shreshold Leakage Current of SiC MESFET |
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| Cui Xianfeng,Pan Hongshu.Study on Off-Set Shreshold Leakage Current of SiC MESFET[J].Semiconductor Technology,2010,35(8):784-786. |
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| Authors: | Cui Xianfeng Pan Hongshu |
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| Affiliation: | Cui Xianfeng,Pan Hongshu(Hebei Semiconductor Research Institute,Shijiazhuang 050051,China) |
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| Abstract: | A new technique for reducing the gate-drain leakage of SiC MESFET is introduced.Device performance was improved by using deposit thick SiO2 and high-temperature oxidation.The analysis of testing data shows when device working in S band,the off-set leakage current is heavily decreased,the dispersedness is improved and the power gain efficiency and the power gain is increased 10% and 1.5 dB respectively.For SiC material can form self-oxide,and combine the advantage of SiC process,this technique decrease the o... |
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| Keywords: | off-set shreshold leakage current SiC MESFET oxide LPCVD |
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