| 闪速存储器的发展现状及其可靠性问题 |
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| 引用本文： | 卢廷勋 冀力强. 闪速存储器的发展现状及其可靠性问题[J]. 微处理机, 1997, 0(3): 1-4 |
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| 作者姓名： | 卢廷勋 冀力强 |
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| 作者单位： | 电子工业部东北微电子研究所!沈阳110032 |
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| 摘 要： | 首先对闪速存储器的发展现状进行了评述；然后从结构和失效机理出发，对影响闪速存储器可靠性的各因素进行分析；并提出了改进方法。
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| 关 键 词： | 闪速存储器 过擦除 保持特性 耐久性 |
Developing Situation and Reliability Issues of Flash Memory |
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| Lu Tingxun,Ji Liqiang. Developing Situation and Reliability Issues of Flash Memory[J]. Microprocessors, 1997, 0(3): 1-4 |
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| Authors: | Lu Tingxun Ji Liqiang |
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| Abstract: | This paper first describes the developing situation of flash memory and then analyzes various factors which ihfluence the reliability of flash memory, based on the structure and failure mechanism. At last it proposes some methods to improve the reliability. |
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| Keywords: | flash memory over-erase retention endurance |
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