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Growth of highly (1 1 1) oriented CuIn0.75Al0.25Se2 thin films |
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| Authors: | G Hema Chandra C Udayakumar N Padhy S Uthanna |
| Affiliation: | a Thin Film Laboratory, Materials Science Division, VIT University, Vellore 632 014, India;b Corrosion Science and Technology Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;c Department of Physics, Sri Venkateswara University, Tirupati 517 502, India |
| Abstract: | CuIn0.75Al0.25Se2 thin films prepared onto glass substrates at TS=573 K were single phase, nearly stoichiometric and polycrystalline with a strong (1 1 1) preferred orientation showing sphalerite structure. The results of X-ray diffraction and electron diffraction studies are compared, interpreted and correlated with micro-Raman spectra. The optical absorption studies indicated a direct band gap of 1.16 eV with high absorption coefficient (>104 cm?1) near the fundamental absorption edge. |
| Keywords: | Semiconductor thin films X-ray Diffraction Electron Diffraction Raman spectra Optical properties |
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