Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes |
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Authors: | Park Woon Ik Yoon Jong Moon Park Moonkyu Lee Jinsup Kim Sung Kyu Jeong Jae Won Kim Kyungho Jeong Hu Young Jeon Seokwoo No Kwang Soo Lee Jeong Yong Jung Yeon Sik |
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Affiliation: | Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea. |
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Abstract: | We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes. |
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