| CDMA-800MHz频段低温低驻波比放大电路设计 |
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| 引用本文： | 高飞,张晓平,曹必松,高葆新.CDMA-800MHz频段低温低驻波比放大电路设计[J].电子学报,2005,33(9):1626-1628. |
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| 作者姓名： | 高飞 张晓平 曹必松 高葆新 |
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| 作者单位： | 1. 清华大学深圳研究生院,北京 100084;2. 清华大学物理系,北京 100084 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，北京市科委科研项目 |
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| 摘 要： | 为用HEMT晶体管设计L波段低驻波比放大电路,本文用输入无源复反射系数在输出反射平面上的共轭匹配区表达式,将驻波比约束转化为无源匹配区域的映射.同时为了计算放大电路低温下噪声,通过有损输入模型导出了噪声的温度关系式.实测CDMA-830MHz高温超导前端放大器噪声温度小于30K,输入驻波比小于1.3,输出驻波比小于1.8,增益大于17dB.
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| 关 键 词： | 低温放大电路 电路设计 噪声特性 |
| 文章编号： | 0372-2112（2005）09-1626-03 |
| 收稿时间： | 2004-03-10 |
| 修稿时间： | 2004-03-102004-04-23 |
Design and Analysis of Cryocooled LNA Circuit with Low VSWR |
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| GAO Fei,ZHANG Xiao-ping,CAO Bi-song,GAO Bao-xin.Design and Analysis of Cryocooled LNA Circuit with Low VSWR[J].Acta Electronica Sinica,2005,33(9):1626-1628. |
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| Authors: | GAO Fei ZHANG Xiao-ping CAO Bi-song GAO Bao-xin |
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| Affiliation: | 1. Tsinghua University Shenzhen Graduate School,Beijing 100084,China;2. Tsinghua University Department of Physics,Beijing 100084,China |
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| Abstract: | L band HEMT amplifiers applied inmobile communications must have low input VSWR,In this paper a graphic method is proposed to map the conjugated matched ΓL to Γs plane to find optimized matching network.To calculate cryocooled LNA's NF a lossy input network model is built and a temperature-dependent NF formula is obtained and verified experimentally.The cryocooled LNA in HTS front end is measured with Noise Temperature ＜30 K,VSWRi ＜1.3 and VSWRo ＜1.8,Gain ＞17dB. |
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| Keywords: | cryocooled LNA MIC design amplifier noise characteristics |
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