| 氮化镓微波电子学的进展 |
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| 引用本文： | 袁明文,潘静. 氮化镓微波电子学的进展[J]. 微纳电子技术, 1999, 0(3) |
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| 作者姓名： | 袁明文 潘静 |
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| 作者单位： | 电子部第十三所 |
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| 摘 要： | 简要介绍宽禁带半导体氮化镓材料的生长、微波电子器件的物理特性、制造工艺和微波性能。
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| 关 键 词： | 宽禁带 半导体 微波 器件 |
Progress of GaN Microwave Electronics |
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| Yuan Mingwen,Pan Jing. Progress of GaN Microwave Electronics[J]. Micronanoelectronic Technology, 1999, 0(3) |
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| Authors: | Yuan Mingwen Pan Jing |
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| Abstract: | The wideband gap semiconductor GaN materials growth,microwave devices physics,manufacturing technology and microwave performance has been briefly described in this paper. |
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| Keywords: | Wideband gapSemiconductorMicrowaveDevice |
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