Modeling of CrSi2-Si and MoSi2-Si Schottkybarrier contacts |
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| Authors: | Donoval D Snowden CM Nagl V Racko J Barus M |
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| Affiliation: | Dept. of Microelectron., Slovak Tech. Univ., Bratislava; |
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| Abstract: | Forward and reverse l-V characteristics measured on CrSi2 -Si and MoSi2Si Schottky structures were compared with simulated ones. While the CrSi2-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi2-Si exhibit the nearly ideal forward and reverse I-V characteristics. The model for numerical simulation involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation recombination theory and has the closed form |
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