High-speed InGaAs on Si metal-semiconductor-metal photodetectors |
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| Authors: | Droge E. Schnabel R.F. Bottcher E.H. Grundmann M. Krost A. Bimberg D. |
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| Affiliation: | Inst. fur Festkorperphys. I, Tech. Univ. Berlin ; |
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| Abstract: | High-speed long-wavelength metal-semiconductor-metal (MSM) photodetectors were fabricated on the Fe-doped InP/GaAs material system on Si. The detector layers were grown by MOCVD on exactly oriented Si(001) patterned with submicrometre pitch V-grooves. The devices show a fast impulse response (44 ps FWHM, 83 ps fall time) and a large bandwidth of 3.4 GHz for illumination with 1.31 μm light pulses at 5 V bias |
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