The effect of aluminum on the microstructure and phase composition of boron carbide infiltrated with silicon

Reaction-bonded boron carbide is prepared by pressureless infiltration of boron carbide preforms with molten silicon in a graphite furnace under vacuum. The presence of Al₂O₃ parts in the heated zone, even though not in contact with the boron carbide preform, causes aluminum to appear in the liquid silicon. The formation of aluminum sub-oxide (Al₂O) stands behind the transport of aluminum into the composite. The presence of aluminum in the boron carbide–silicon system accelerates the transformation of the initial boron carbide particles into B_x(C,Si,Al)_y and Al_1.36B₂₄C₄, newly formed carbide phases_. It also leads during cooling to the formation of some Si–Al solid solution particles. The effect of Al on the microstructural evolution is well accounted for by the calculated isothermal section of the quaternary Al–B–C–Si phase diagram, according to which the solubility of boron in liquid silicon increases with increasing aluminum content. This feature is a key factor in the evolution of the microstructure of the infiltrated composites.