Interconnects for nanoscale MOSFET technology: a review |
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Authors: | Amit Chaudhry |
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Affiliation: | UIET, Panjab University, Chandigarh, India |
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Abstract: | In this paper, a review of Cu/low-k, carbon nanotube (CNT), graphene nanoribbon (GNR) and optical based interconnect technologies has been done. Interconnect models, challenges and solutions have also been discussed. Of all the four technologies, CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies, despite some minor drawbacks. It is concluded that beyond 32 nm technology, a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits. |
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Keywords: | Cu/low-k 3D integration electromigration CNTs graphene interconnects comparisons |
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