| 埋超结层的电场分布的一个解析模型 |
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| 引用本文： | 黄海猛,陈星弼. 埋超结层的电场分布的一个解析模型[J]. 半导体学报, 2013, 34(6): 064006-4 |
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| 作者姓名： | 黄海猛 陈星弼 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China |
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| 基金项目： | 高等学校博士学科点专项科研基金 |
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| 摘 要： | An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green’s function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations.
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| 关 键 词： | analytical model superjunction devices electric field distributions breakdown voltage |
An analytical model of the electric field distributions of buried superjunction devices |
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| Huang Haimeng and Chen Xingbi. An analytical model of the electric field distributions of buried superjunction devices[J]. Chinese Journal of Semiconductors, 2013, 34(6): 064006-4 |
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| Authors: | Huang Haimeng and Chen Xingbi |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | An analytical model of the electric field distributions of buried superjunction structures, based on the charge superposition method and Green's function approach, is derived. An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation. The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail, and the breakdown voltage is demonstrated by simulations. |
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| Keywords: | analytical model superjunction devices electric field distributions breakdown voltage |
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