离子注入和脉冲激光退火制备碲超饱和掺杂单晶硅pn结

Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ¹²⁶Te⁺ to a dose of 2×10¹⁵ ions/cm²,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm²,1-5 pulses,duration 30 ns）,an n⁺ type single crystalline tellurium supersaturated silicon layer with high carrier density(highest concentration 4.10×10¹⁹ cm^-3,three orders of magnitude larger than the solid solution limit) was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best.

Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type silicon wafers were implanted with 245 keV ¹²⁶Te⁺ to a dose of 2×10¹⁵ ions/cm², after a PLM process (248 nm, laser fluence of 0.30 and 0.35 J/cm², 1-5 pulses, duration 30 ns), an n⁺ type single crystalline tellurium supersaturated silicon layer with high carrier density (highest concentration 4.10×10¹⁹ cm^-3, three orders of magnitude larger than the solid solution limit) was formed, it shows high broadband optical absorption from 400 to 2500 nm. Current-voltage measurements were performed on these diodes under dark and one standard sun (AM 1.5), and good rectification characteristics were observed. For present results, the samples with 4-5 pulses PLM are best.