UV/Ozone 表面处理对AlGaN/GaN HEMTs 性能的影响

工艺过程中对晶圆表面处理对制作出高性能的AlGaN/GaN HEMT起到至关重要的作用，洁净的表面能够有效提高器件性能以及器件可靠性。本文发现通过UV/Ozone表面处理，AlGaN/GaN HEMT器件的欧姆接触以及肖特基接触的电学特性均发生明显变化，根据实验中现象以及相关实验数据，并且采用X射线光电子能谱对实验样品进行表面分析测试，着重阐述了UV/Ozone处理对晶圆表面的作用，以及其影响AlGaN/GaN HEMT器件欧姆接触特性以及肖特基接触特性的原因。

Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs

Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and X-ray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.