Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substrates |
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Authors: | S Neretina N V Sochinskii P Mascher |
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Affiliation: | (1) Centre for Electrophotonic Materials and Devices (CEMD), Department of Engineering Physics, McMaster University, L8S 4L7 Hamilton, ON, Canada;(2) Instituto de Microelectronica de Madrid-CNM-CSIC, c/Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid, Spain |
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Abstract: | The effects of rapid thermal annealing (RTA) on CdTe/Si (100) heterostructures have been studied in order to improve the structural
quality of CdTe epilayers. Samples of CdTe (111) polycrystalline thin films grown by vapor phase epitaxy (VPE) on Si (100)
substrates have been investigated. The strained structures were rapidly thermally annealed at 400°C, 450°C, 500°C, 550°C,
and 600°C for 10 sec. The microstructural properties of the CdTe films were characterized by carrying out scanning electron
microscopy (SEM), x-ray diffraction (XRD), and atomic force microscopy (AFM). We have shown that the structural quality of
the CdTe epilayers improves significantly with increasing annealing temperature. The optimum annealing temperature resulting
in the highest film quality has been found to be 500°C. Additionally, we have shown that the surface nucleation characterized
by the island size distribution can be correlated with the crystalline quality of the film. |
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Keywords: | Infrared (IR) detection CdTe/Si heterostructures rapid thermal annealing (RTA) structural characterization |
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