High-performance 1.5 /spl mu/m GaInNAsSb lasers grown on GaAs |
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| Authors: | Bank SR Wistey MA Goddard LL Yuen HB Bae HP Harris JS |
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| Affiliation: | Solid State & Photonics Lab, Stanford Univ., CA, USA; |
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| Abstract: | Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 /spl mu/m) GaAs-based lasers are reported. A 20/spl times/1220 /spl mu/m as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm/sup 2/, external efficiency of 53%, and 200 mW peak output power at 1.5 /spl mu/m. The pulsed threshold current density was 450 A/cm/sup 2/ with 1145 mW peak output power. |
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