| BF_2~ 注入硅栅p沟MOS场效应晶体管辐射感生界面陷阱测量 |
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| 引用本文： | 张正选,罗晋生,袁仁峰,张廷庆,姜景和.BF_2~ 注入硅栅p沟MOS场效应晶体管辐射感生界面陷阱测量[J].原子能科学技术,2000(4). |
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| 作者姓名： | 张正选 罗晋生 袁仁峰 张廷庆 姜景和 |
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| 作者单位： | 西北核技术研究所!陕西西安710024(张正选，袁仁峰，姜景和)，西安交通大学微电子所!陕西西安710049(罗晋生)，西安电子科技大学微电子所!陕西西安710071(张廷庆) |
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| 摘 要： | 利用亚阈测量技术对BF 2 注入硅栅PMOSFET辐射感生界面陷阱进行了测量。对BF 2 注入PMOSFET具有抑制辐射感生界面陷阱的机理进行了分析和讨论。
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| 关 键 词： | 二氟化硼 硅栅PMOSFET 辐射感生界面陷阱 |
Measurement of Radiation-induced Interface Traps on BF_2~ Implanted Si-gate PMOSFET |
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| ZHANG Zheng xuan ,LUO Jin sheng ,YUAN Ren feng ,ZHANG Ting qing ,JIANG Jing he.Measurement of Radiation-induced Interface Traps on BF_2~ Implanted Si-gate PMOSFET[J].Atomic Energy Science and Technology,2000(4). |
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| Authors: | ZHANG Zheng xuan LUO Jin sheng YUAN Ren feng ZHANG Ting qing JIANG Jing he |
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| Affiliation: | ZHANG Zheng xuan 1,LUO Jin sheng 2,YUAN Ren feng 1,ZHANG Ting qing 3,JIANG Jing he 1 |
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| Abstract: | The radiation induced interface traps on BF 2 implanted Si gate PMOSFET are measured using the subthreshold method. The mechanism of depression of the radiation induced interface traps by the BF 2 implanted has also been analysed. |
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| Keywords: | BF_2~ Si-gate PMOSFET radiation-induced interface traps |
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