| sol-gel法制备锆钛酸钡薄膜的研究 |
| |
| 引用本文： | 胡丹,翟继卫,张良莹,姚熹. sol-gel法制备锆钛酸钡薄膜的研究[J]. 电子元件与材料, 2004, 23(12): 10-12,16 |
| |
| 作者姓名： | 胡丹 翟继卫 张良莹 姚熹 |
| |
| 作者单位： | 同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092 |
| |
| 基金项目： | 973计划信息功能陶瓷的若干基础问题研究子课题:铁电陶瓷可逆介电非线性响应与可调机理研究(项目编号:2002CB613304)，上海市重点学科资助项目 |
| |
| 摘 要： | 采用sol-gel法在Pt/Ti/SiO2/Si衬底上制备了Ba(Zr0.3Ti0.7)O3(BZT)薄膜。对其先体溶液进行了差热与热失重曲线(DSC-TG)分析,并以此来确定了薄膜的热处理工艺。X射线衍射分析表明,550℃时开始有钙钛矿相生成,到600℃时,已经完全形成了钙钛矿结构。采用er、tgd的频率和偏压特性曲线研究了不同工艺条件下薄膜的介电性能。经过700℃热处理,薄膜在10 kHz频率,300 K温度测试条件下,相对介电常数为385,介质损耗为0.022;200103 V/cm电场条件下薄膜介电可调率为25.6%。
|
| 关 键 词： | 无机陶瓷材料 sol-gel BZT薄膜 烧结温度 介电性能 |
| 文章编号： | 1001-2028(2004)12-0010-03 |
Study of Ba(Zr0.3Ti0.7)O3(BZT) Thin Film by Sol-gel |
| |
| HU Dan,ZHAI Ji-wei,ZHANG Liang-ying,YAO Xi. Study of Ba(Zr0.3Ti0.7)O3(BZT) Thin Film by Sol-gel[J]. Electronic Components & Materials, 2004, 23(12): 10-12,16 |
| |
| Authors: | HU Dan ZHAI Ji-wei ZHANG Liang-ying YAO Xi |
| |
| Abstract: | Ba(Zr0.3Ti0.7)O3(BZT) thin films were prepared by sol-gel processing on Pt/Ti/SiO2/Si substrate. The heat-treatment technology was fixed according to the DSC-TG curves. XRD patterns show that the perovskite phase was obtained on the annealing temperature of 600℃. The dielectric properties of thin films with different annealing temperature were investigated by the C-V and C-f. The dielectric constant and loss tanget is 385 and 0.022 respectively at 10kHz and 300K.A tunability of 25.6% has been achieved under electric field of 200103 V/cm. |
| |
| Keywords: | inorganic ceramic materials sol-gel BZT thin film annealing temperature dielectric properties |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
