Reduction of graphite oxide to graphene with laser irradiation |
| |
| Affiliation: | 1. Department of Laser Technologies, Center for Physical Sciences and Technology, Savanoriu Ave. 231, Vilnius LT-02300, Lithuania;2. Faculty of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania;3. Institute of Chemistry, Center for Physical Sciences and Technology, A. Gostauto 9, LT-01108 Vilnius, Lithuania;1. Plasma Processing Laboratory, Lithuanian Energy Institute, Breslaujos 3, LT44403, Kaunas, Lithuania;2. Institute of Materials Science, Kaunas University of Technology, K. Baršausko 59, LT51423, Kaunas, Lithuania;3. Department of Physics, Kaunas University of Technology, Studentų 50, LT-51368, Kaunas, Lithuania;1. School of Physics, Iran University of Science and Technology, Tehran 16844, Iran;2. Department of Physics & Astronomy, University of Delaware, Newark, DE 19716, USA;3. Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA;4. Department of Materials Sciences and Engineering, University of Delaware, Newark, DE 19716, USA;1. Material Science and Engineering Department, Egypt-Japan University of Science and Technology, New Borg El Arab, Alexandria 21934, Egypt;2. Production Engineering Department, Faculty of Engineering, Alexandria University, El-Guish Road, El-Shatby, Alexandria 21526, Egypt;3. Chemical Engineering Department, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;1. Technische Universität Chemnitz, Chair of Measurement and Sensor Technology, Chemnitz, Germany;2. Technische Universität Chemnitz, Department of Digital Printing and Imaging Technology, Chemnitz, Germany;3. Technische Universität Chemnitz, Semiconductor Physics, Chemnitz, Germany;4. Fraunhofer Research Institute for Electronic Nano Systems (ENAS), Department Printed Functionalities, Chemnitz, Germany;1. Department of Nanomechanics, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 34103, Republic of Korea;2. CIC Energigune, Parque Tecnológico de Álava, Albert Einstein 48, ED. CIC, 01510 Miñano, Spain;3. Nano Mechatronics, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic of Korea;4. Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeongno, Yuseong-gu, Daejeon 34129, Republic of Korea;5. School of Mechanical Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 156-756, Republic of Korea;1. Beijing Key Laboratory of Photoelectric/Electrophotonic Conversion Materials, Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081, China;2. Laser Micro-/Nano-Fabrication Laboratory, Beijing Institute of Technology, Beijing 100081, China |
| |
| Abstract: | Reduction of graphite oxide (GO) to graphene induced by picosecond pulsed laser irradiation has been studied by Raman spectroscopy, scanning electron microscopy together with modeling of temperature dynamics in the materials. Dependence of the D, G, and 2D Raman band parameters on the laser pulse energy and the irradiation dose was evaluated. The exponential decline of the full width at half maximum of the Raman lines with increasing product of the pulse energy and irradiation dose was observed indicating ordering in the film and reduction in the number of graphene layers during the laser treatment. The minimum concentration of structural defects and the largest relative intensity of the 2D peak were found for the 50 mW mean laser power and the 30 mm/s scanning speed. Modeling of temperature dynamics revealed that the temperature of the GO film irradiated with a single laser pulse at a fluence of 0.04 J/cm2 (50 mW) increased up to 1400 °C for a few nanoseconds, which was sufficient for the effective reduction of GO to graphene with successive laser pulses. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
