Spin polarization of single-layer graphene epitaxially grown on Ni(1 1 1) thin film |
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| Affiliation: | 1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;2. Advanced Science Research Center, Japan Atomic Energy Agency, 7-3-1 Shirakata-Shirane, Tokai, Ibaraki 319-1195, Japan;3. University of Science and Technology of China, Hefei, Anhui 230026, PR China;1. School of Electronic Science & Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, PR China;2. School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, Anhui 230009, PR China;1. College of physics and electrical engineering, Anyang Normal University, Anyang, Henan 455000, PR China;2. Department of Physics and Engineering, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou, Henan 450052, PR China;3. Institute of Functional Nano & Soft Materials (FUNSOM) & Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, PR China;1. “E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria;2. Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia, Bulgaria;3. Faculty of Physics, University of Sofia, 5 James Boucher Blvd., 1164 Sofia, Bulgaria;4. “R. Kaishev” Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia, Bulgaria;1. Université de Carthage, Unité de Recherche 99/UR12-30, Faculté des Sciences de Bizerte, 7021 Zarzouna, Tunisia;2. Université de Toulouse, LPCNO, CNRS 5215, INSA, 135 avenue de Rangueil, 31077 Toulouse Cedex 4, France;3. IRCP, UMR 8247 CNRS – Chimie ParisTech, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France;4. Université de Toulouse, LNCMI, CNRS UPR 3228, 143 avenue de Rangueil, 31400 Toulouse, France;5. Université Pierre et Marie Curie, 4 place Jussieu, 75005, France;6. Department of Chemistry, Girls College of Science, University of Dammam, P.O. Box 838, Dammam 31113, Saudi Arabia;1. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin 150025, People’s Republic of China;2. Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, Najran 11001, Saudi Arabia;3. Department of Chemistry, Faculty of Science and Arts, Najran University, Najran 11001, Saudi Arabia;1. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, 141700, Russia;2. A. M. Prokhorov General Physics Institute of Russian Academy of Sciences, Moscow, 119991, Russia;3. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221, Prague, Czech Republic;4. Dresden High Magnetic Field Laboratory (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, D-01314, Dresden, Germany;5. Faculty of Physics, Lomonosov Moscow State University, 119991, Moscow, Russia |
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| Abstract: | The spin-resolved electronic structure of graphene on Ni(1 1 1) was investigated using spin-polarized metastable deexcitation spectroscopy (SPMDS). Graphene was grown epitaxially on a Ni(1 1 1) single-crystalline surface using the ultra high vacuum chemical vapor deposition technique with benzene vapor as a precursor. At 50 L (5 × 10−5 Torr s), a single epitaxial layer of graphene was formed, but no further growth was observed at higher exposure. The spin-summed spectrum of graphene/Ni(1 1 1) had a new peak at the Fermi level and three weak features corresponding to the molecular orbitals of graphene. Spin asymmetry analysis of the SPMDS spectra revealed that the spin polarization of the electronic states shown by the new peak was parallel to the majority spin of the Ni substrate. The appearance and spin polarization of the new electronic states are discussed in terms of the hybridization of graphene π orbitals and Ni d orbitals. |
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