Fano resonance in Raman scattering of graphene |
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| Affiliation: | 1. V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, pr. Akademika Koptyuga 3, Novosibirsk, 630090, Russia;2. A.P. Vinogradov Institute of Geochemistry, Siberian Branch of the Russian Academy of Sciences, ul. Favorskogo 1a, Irkutsk, 664033, Russia;3. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia;1. Nanophotonics Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli 620015, India;2. Directorate of Laser System, Research Centre Imarat, Hyderabad 500 069, India;3. Department of Physics, National Institute of Technology, Warangal 506 004, India;4. School of Physics, University of Hyderabad, Hyderabad 500046, India;5. Electro-Optical Instruments Research Academy, Hyderabad 500 069, India |
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| Abstract: | Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG. |
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