Evidence of band bending and surface Fermi level pinning in graphite oxide |
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| Affiliation: | 1. Department of Physics, Institute of Basic Science, Daegu University, Gyeongsan 712-714, Republic of Korea;2. Nebraska Center for Materials and Nanoscience, Department of Physics and Astronomy, University of Nebraska-Lincoln, NE 68588-0299, USA;1. Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, Konrad Wachsmann Allee 17, 03046 Cottbus, Germany;2. Institute of Physics ASCR, v.v.i., Na Slovance 2, 18221, Praha 8, Czech Republic;1. Department of Radiation Oncology, Yonsei Cancer Center, Yonsei University College of Medicine, Seoul, Republic of Korea;2. Division of Medical Oncology, Department of Internal Medicine, Yonsei Cancer Center, Yonsei University College of Medicine, Seoul, Republic of Korea;3. Division of Colorectal Surgery, Department of Surgery, Yonsei Cancer Center, Yonsei University College of Medicine, Seoul, Republic of Korea;4. Division of Gastroenterology, Department of Internal Medicine, Yonsei Cancer Center, Yonsei University College of Medicine, Seoul, Republic of Korea;5. Division of Hematology-Oncology, Department of Medicine, Samsung Medical Center, Sungkyunkwan University School of Medicine, Seoul, Republic of Korea;6. Department of Pathology, Yonsei University College of Medicine, Seoul, Republic of Korea;1. Division of Medical Oncology, Department of Internal Medicine, Yonsei University College of Medicine, Seoul, Republic of Korea;2. Department of Radiation Oncology, Yonsei University College of Medicine, Seoul, Republic of Korea;3. Department of Biostatistics, Yonsei University College of Medicine, Seoul, Republic of Korea;4. Department of Surgery, Yonsei University College of Medicine, Seoul, Republic of Korea;6. Department of Pathology, Yonsei University College of Medicine, Seoul, Republic of Korea;5. Department of Radiology, Yonsei University College of Medicine, Seoul, Republic of Korea;7. Division of Hematology-Oncology, Department of Medicine, Samsung Medical Center, Sungkyunkwan University School of Medicine, Seoul, Republic of Korea |
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| Abstract: | We present the electronic structure of graphite oxide in the vicinity of the Fermi level measured using ultraviolet photoemission and inverse photoemission spectroscopies and compare it with X-ray absorption spectra. The expected p-type behavior of graphite oxide is not observed at the surface and the presence of band bending is invoked. The observed electronic structure of graphite oxide exhibited an n-type semiconducting band structure with a band gap of 2.3 ± 0.4 eV. An oxygen related state, at 0.8 eV above Fermi level, and the suppression of the unoccupied carbon weighted states at the conduction band minimum suggests that the oxygen vacancies at the surface of graphite oxide contribute to the n-type semiconducting electronic structure of the surface. |
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