Structure–property–processing relationships of single-wall carbon nanotube thin film piezoresistive sensors |
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| Affiliation: | 1. Department of Advanced Circuit Interconnection, Pusan National University, Busan 609-735, Republic of Korea;2. Department of Nano Fusion Technology, Pusan National University, Busan 609-735, Republic of Korea;3. Department of Nanomechatronics Engineering, Pusan National University, Busan 609-735, Republic of Korea;4. Department of Nanomaterials Engineering, Pusan National University, Busan 609-735, Republic of Korea;1. Faculty of Aerospace Engineering, Shenyang Aerospace University, Shenyang, 110136, China;2. School of Engineering, University of South Australia, Mawson Lakes, SA, 5095, Australia;3. Department of Mechanical Engineering, Faculty of Engineering, Benha University, Egypt;1. College of Civil Engineering, Nanjing Tech University, 30 Puzhu Road(S), Nanjing, Jiangsu Province 211800, China;2. Department of Civil and Environmental Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;3. Department of Mechanical Engineering, Khalifa University, PO Box 127788, Abu Dhabi, United Arab Emirates;1. Department of Civil and Environmental Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea;2. School of Spatial Environment System Engineering, Hangdong Global University, 558 Handong-ro, Buk-gu, Pohang, Gyeongbuk 37554, Republic of Korea;1. Faculty of Aerospace Engineering, Shenyang Aerospace University, Shenyang 110136, China;2. School of Engineering, University of South Australia, Mawson Lakes, SA 5095, Australia |
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| Abstract: | In an investigation of structure–property–processing relationships for SWCNT thin film piezoresistive sensors, the gauge factor of the sensors for a small tensile deformation (less than 2% strain) was found to be close to unity and showed negligible dependence on the film thickness and SWCNT bundle length (L) and diameter (d). However, for a large tensile deformation (20–30% strain), the film thickness and the microstructure of SWCNTs had a compounding effect on the piezoresistive behavior. A gauge factor of ～5 was obtained for the sensors fabricated with SWCNT bundles of short length and thin diameter (L = 549 nm and d = 3.7 nm) with thicker films. Furthermore, the gauge factor of the sensors was found inversely proportional to the excluded volume Vex of SWCNT bundles (Vex ∝ 1/L2 d). |
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