Temperature gradient chemical vapor deposition of vertically aligned carbon nanotubes |
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| Affiliation: | 1. Institute of Energy Technology, ETH Zürich, Sonneggstrasse 3, Zürich CH-8092, Switzerland;2. AIXTRON, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, United Kingdom;3. Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom;1. School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea;2. Advanced Batteries Research Center, Korea Electronics Technology Institute, Seongnam 13509, Gyeonggi-do, Republic of Korea;3. Department of Health Sciences and Technology, Samsung Advanced Institute for Health Sciences and Technology (SAIHST), Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea;4. Department of Chemistry, Dongguk University-Seoul Campus, Jung-gu 04620 Seoul, Republic of Korea;1. College of Electromechanical Engineering, Qingdao University of Science and Technology, Shandong Province, 266061, China;2. ShangDong Dazhan Nano Materials Co.,Ltd. Shandong Province, 256220, China;1. Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, United States;2. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH 45433, United States;3. UES Inc., Dayton, OH 45432, United States;1. Science and Technology Center of Excellence, El Salam City, Cairo, Egypt;2. Department of Chemistry, Cairo University, El Giza, Egypt;3. Department of Process Development, Egyptian Petroleum Research Institute, Egypt;1. WPI-Institute of Transformative Bio-Molecules and Department of Chemistry, Graduate School of Science, Nagoya University, Nagoya 464-8602, Japan;2. State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China;3. Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;4. Institute of Theoretical Chemistry, State Key Laboratory of Theoretical and Computational Chemistry, Jilin University, Changchun 130023, China;5. Fukui Institute for Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan;6. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States;7. Cherry L. Emerson Center for Scientific Computation and Department of Chemistry, Emory University, Atlanta, GA 30322, United States;1. Department of Applied Physics, Aalto University School of Science, P. O. Box 15100, FI 00076 Aalto, Finland;2. Skolkovo Institute of Science and Technology, 100 Novaya st., Skolkovo, Odintsovsky district, Moscow Region 143025, Russia;3. Canatu Ltd, Konalankuja 5, 00390 Helsinki, Finland |
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| Abstract: | We present temperature gradient chemical vapor deposition (TG CVD) for producing vertically aligned (VA-) carbon nanotubes (CNTs). Independent heaters on the gas inlet and catalyst substrate sides of a cold-wall, vertical CVD reactor can modulate the gas temperature gradient to lead to controlled thermal histories of acetylene precursor. Our growth results reveal that such a precursor thermal history can play a significant role in the growth and structural features of the resultant VA-CNTs. We find several gas thermal zones particularly important to the VA-CNT growth by evaluating the precursor dwell time in different zones. Thermal treatment of the acetylene precursor at 600–700 °C is found crucial for the synthesis of VA-CNTs. When this thermal zone is conjoined in particular with a zone >700 °C, efficient growths of single-walled and double-walled VA-CNTs can be achieved. These gas thermal zones can contribute to VA-CNT growths by mixing various secondary hydrocarbons with acetylene, corroborated by the results of our reacting flow simulation. Our findings emphasize the influence of gas-phase reactions on the VA-CNT growth and suggest that our TG CVD approach can be practically utilized to modulate complex gas-phase phenomena for the controlled growth of VA-CNTs. |
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