Graphene films decorated with metal sulfide nanoparticles for use as counter electrodes of dye-sensitized solar cells |
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| Affiliation: | 1. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR China;2. State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China;3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China;1. College of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, PR China;2. Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074, PR China;3. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, PR China;1. Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon 34134, South Korea;2. Faculty of Biotechnology, Chemistry and Environmental Engineering, Phenikaa University, Hanoi 10000, Viet Nam;3. Phenikaa Research and Technology Institute (PRATI), A&A Green Phoenix Group, 167 Hoang Ngan, Hanoi 10000, Viet Nam;1. Department of Greenergy, National University of Tainan, Taiwan;2. Department of Microelectronics Engineering, National Kaohsiung Marine University, Kaohsiung, Taiwan |
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| Abstract: | The composite films of metal sulfide (MS, M = Ni, Co) nanoparticles (NPs)/graphene films were proposed to be novel transparent conductive oxide- and platinum (Pt)-free counter electrodes with high electrocatalytic activity for dye-sensitized solar cells (DSSCs). Such DSSCs show higher photovoltaic conversion efficiencies of 5.25% (NiS/graphene) and 5.04% (CoS/graphene), compared with 5.00% for (Pt/fluorine-doped tin oxide). The excellent DSSC efficiencies are mainly due to the superior electrocatalytic activity of the MS and graphene films, and highly electrical properties of graphene films (9.57 Ω/sq). The excellent charge transfer between MS NPs and graphene films is due to the unique MS NPs and high surface area graphene structure. The graphene films were directly grown on dielectric SiO2 substrates by chemical vapor deposition. MS NPs were uniformly implanted on the graphene films by dip coating of MS precursors M(C3H5OS2)2, and further annealed at 400 °C for 30 min under Ar. |
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