首页 | 本学科首页   官方微博 | 高级检索  
     

正硅酸乙酯对有机无机杂化膜结合强度的影响
引用本文:张兴文,胡立江,赵树山,孙德智. 正硅酸乙酯对有机无机杂化膜结合强度的影响[J]. 哈尔滨工业大学学报, 2004, 36(10): 1344-1346,1350
作者姓名:张兴文  胡立江  赵树山  孙德智
作者单位:哈尔滨工业大学,应用化学系,黑龙江,哈尔滨,150001;哈尔滨工业大学,环境科学与工程系,黑龙江,哈尔滨,150001;哈尔滨工业大学,应用化学系,黑龙江,哈尔滨,150001;哈尔滨工业大学,航天科学与力学系,黑龙江,哈尔滨,150001;哈尔滨工业大学,环境科学与工程系,黑龙江,哈尔滨,150001
基金项目:黑龙江省科技重点国际技术合作项目 (WB0 2 10 4),黑龙江省科技重点攻关资助项目 (GB1A2 0 60 ),哈尔滨工业大学跨学科交叉性研究基金资助项目 (HIT .MD2 0 0 2 0 5 )
摘    要:采用溶胶-凝胶法水解缩合3-缩水甘油醚基丙基三甲基硅烷(GPMS)和正硅酸乙酯(TEOS),制备了TEOS改性的3-缩水甘油醚基丙基倍半硅氧烷,用凝胶渗透色谱GPC进行了表征和确认,浸渍法使其在玻璃基体上成膜.用划痕法通过MTS Nano Indenter XP纳米压痕仪测试了有机一无机杂化膜的结合强度和划痕形貌,测试结果表明:适当添加TEOS可提高有机一无机杂化膜的膜基结合强度,W(TEOS)15%处膜基结合强度达到最大值.

关 键 词:结合强度  有机-无机杂化膜  纳米划痕  正硅酸乙酯
文章编号:0367-6234(2004)10-1344-03
修稿时间:2004-02-25

Influence of tetraethoxysilanes (TEOS) on the interfacial bond strength between organic-inorganic hybrid film and substrate
ZHANG Xing-wen ,,HU Li-jiang ,ZHAO Shu-shan ,SUN De-zhi. Influence of tetraethoxysilanes (TEOS) on the interfacial bond strength between organic-inorganic hybrid film and substrate[J]. Journal of Harbin Institute of Technology, 2004, 36(10): 1344-1346,1350
Authors:ZHANG Xing-wen     HU Li-jiang   ZHAO Shu-shan   SUN De-zhi
Affiliation:ZHANG Xing-wen 1,2,HU Li-jiang 1,ZHAO Shu-shan 3,SUN De-zhi 2
Abstract:Epoxy-silsesquioxanes derived from hydrolytic condensation of (3-glycidoxypropyl) trimethoxysilane (GPMS) and tetraethoxysilane (TEOS) were prepared by sol-gel process. The ormosil thin films were coated on glass substrates by the dip-coating method. The products were characterized by gel partition chromatography (GPC).The nano-scratch method was used to determine the interfacial bond strength and the scratching micrograph by means of MTS Nano Indenter XP. The result showed that appropriate TEOS content in the hybrid films could improve the interfacial adhesion and bond strength. The hybrid film contained 15% TEOS exhibited the maximum interfacial bond strength.
Keywords:adhesion strength  organic-inorganic hybrid film  nano-scratch  tetraethoxysilane
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号