Integrated AlGaAs two-beam LD-PD array fabricated by reactive ion beam etching |
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| Authors: | Uchida M. Matsumoto S. Asakawa K. Kawano H. |
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| Affiliation: | NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan; |
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| Abstract: | Monolitically integrated AlGaAs two-beam laser diode (LD)- photodiode (PD) arrays are described. LDs and PDs have etched facets fabricated by reactive ion beam etching (RIBE). LDs in the array exhibit threshold currents as low as 18 mA and external quantum efficiencies of more than 30% per facet. A PD can detect more than 20% of a light beam emitted from an LD facing it. Crosstalk between the two LD-PD columns (separated by 50 ?m), on the other hand, is suppressed to less than ?20 dB by an AlGaAs optical barrier (5 ?m thick) fabricated between them. |
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