| 常压射频激励低温冷等离子体刻蚀光刻胶 |
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| 引用本文： | 赵玲利,李海江,王守国,叶甜春. 常压射频激励低温冷等离子体刻蚀光刻胶[J]. 半导体学报, 2005, 26(3): 613-617 |
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| 作者姓名： | 赵玲利 李海江 王守国 叶甜春 |
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| 作者单位： | 中国科学院微电子研究所,北京,100010;中国科学院微电子研究所,北京,100010;中国科学院微电子研究所,北京,100010;中国科学院微电子研究所,北京,100010 |
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| 摘 要： | 介绍了一种新型的常压射频激励低温冷等离子体喷射装置，利用电流和电压探针研究了该等离子体的放电特性，利用热电偶研究了喷射出的等离子体束流温度，得到其放电与传统的真空室中电容耦合放电具有一致的特性．利用该等离子体装置在大气压下对AZ9918光刻胶进行了干法刻蚀实验，用电镜观察了刻蚀留胶前后硅表面的效果，研究了放电等离子体功率以及衬底温度对刻蚀速率的影响，在放电功率为300W时，得到刻蚀速率接近500nm/min．
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| 关 键 词： | 大气压 冷等离子体 光刻胶 刻蚀 |
| 文章编号： | 0253-4177(2005)03-0613-05 |
| 修稿时间： | 2004-04-06 |
Ashing Photoresist Using an Atmospheric Pressure RF-Excited Cold Plasma |
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| Zhao Lingli,Li Haijiang,Wang Shouguo,Ye Tianchun. Ashing Photoresist Using an Atmospheric Pressure RF-Excited Cold Plasma[J]. Chinese Journal of Semiconductors, 2005, 26(3): 613-617 |
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| Authors: | Zhao Lingli Li Haijiang Wang Shouguo Ye Tianchun |
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| Abstract: | The construction of a novel atmospheric pressure radio frequency excited plasma apparatus is illustrated.This apparatus can eject low temperature cold plasma stream.Its discharge characteristics are studied with a current and a voltage probe.A thermal couple is utilized to measure the temperature of the jet stream.One kind of photoresist AZ9918 is etched with the plasma stream at ambient environment.Configuration on the surface of silicon wafers is studied with SEM.The effect of the forward input power and the substrate temperature on the etching rate of photoresist is studied.A maximum etching rate of nearly 500nm/min is observed when the forward power is 300W. |
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| Keywords: | atmospheric pressure cold plasma photoresist etching |
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