| 变温霍尔效应测量浅掺杂n型锗半导体薄膜的电学特性 |
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| 引用本文： | 王春安,闫俊虎. 变温霍尔效应测量浅掺杂n型锗半导体薄膜的电学特性[J]. 信息记录材料, 2010, 11(3): 56-59 |
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| 作者姓名： | 王春安 闫俊虎 |
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| 作者单位： | 广东技术师范学院,电子与信息学院,广州,510665 |
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| 摘 要： | 采用变温霍尔效应方法测量了浅掺杂n型锗薄膜的半导体电学特性。根据77K~400K温度范围内的变温霍尔效应测量,通过对实验数据曲线的分析,由lg(|RH|)-1/T曲线高温本征导电温区的斜率计算得到样品禁带宽度Eg=0.75eV,由lg(|RH|T3/4)-1/T低温杂质电离区的曲线斜率得到施主杂质电离能为Ei=0.012eV。
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| 关 键 词： | 浅掺杂n型锗薄膜 变温霍尔效应 禁带宽度 杂质电离能 |
The Temperature-Dependent Hall Measurement for Electrical Properties of n-Ge film Semiconductors |
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| WANG Chun-an,YAN Jun-hu. The Temperature-Dependent Hall Measurement for Electrical Properties of n-Ge film Semiconductors[J]. Information Recording Materials, 2010, 11(3): 56-59 |
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| Authors: | WANG Chun-an YAN Jun-hu |
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| Abstract: | The experimental principle and method of Temperature-Dependent Hall measurement for electrical properties of semiconductors was introduced.As an example,a shallow As-doped n-Ge sample was measured in a range of 77K~400K.The analysis from the data curves depending on temperature indicates that the band gap is 0.75eV from lg(|RH|)-1/T curve.The donor impurity ionization energy is 0.012eV from lg(|RH|T3/4)-1/T curve.All the results are good agreement with the reference value. |
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| Keywords: | shallow n-Ge sample temperature-dependent hall measurement band gap donor impurity ionization energy |
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