| MBE法生长的调制掺杂GaAs／Al＿xGa＿（1－x）As异质结构材料的输运特性研究 |
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| 引用本文： | 朱顺才.MBE法生长的调制掺杂GaAs／Al＿xGa＿（1－x）As异质结构材料的输运特性研究[J].微纳电子技术,1995(1). |
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| 作者姓名： | 朱顺才 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 采用变磁场霍尔效应方法，在低磁场（Ｂ＜０．６Ｔ）和低温（Ｔ＝７７Ｋ）条件下，研究了ＨＥＭＴ器件用调制掺杂ＧａＡｓ／Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ异质结构材料的输运特性。给出了材料电学参数（ρ、ｎ和μ）与Ｂ的依赖关系，揭示了平行电导对材料质量的影响，并对上述依赖关系作了初步的定量分析。
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| 关 键 词： | 异质结构，调制掺杂，输运特性 |
Investigation on the Transport Property in MD GaAs/Al_xGa_(1-x)As Hetero-Structures Grown by MBE |
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| ZhuShuncai.Investigation on the Transport Property in MD GaAs/Al_xGa_(1-x)As Hetero-Structures Grown by MBE[J].Micronanoelectronic Technology,1995(1). |
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| Authors: | ZhuShuncai |
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| Abstract: | The transport property in GaAs /Al_xGa_(1-x)As modulation doped he-tero- structures for HEMT devices is investigated by magnetic field varying Hall method under the conditions of low field (B<0. 6T)and Iow temperature(T=77K).The dependances of the electric Darameters(ρ,n,μ)on B are presen-ted, showing the influence of the parallel conduction on the material quality.And the above dependances is quantitatively analysed. |
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| Keywords: | Hetero-structure Modulation doping Transport propety |
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