Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation |
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| Panpan Tang, Ying Wang, Xiongfei Meng, Sufen Cui. Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation[J]. Journal of Semiconductors, 2018, 39(11): 114007. doi: 10.1088/1674-4926/39/11/114007 P P Tang, Y Wang, X F Meng, S F Cui, Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation[J]. J. Semicond., 2018, 39(11): 114007. doi: 10.1088/1674-4926/39/11/114007.Export: BibTex EndNote |
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| Authors: | Panpan Tang Ying Wang Xiongfei Meng Sufen Cui |
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| Affiliation: | 1. College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China;2. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;3. ZTE Microelectronics Technology Co., LTD., Shenzhen 518000, China |
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| Abstract: | The main content revolves round the on-state characteristics of the variation of a lateral width (VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific on-resistance of the VLW LDMOS device, the simulation results are in good agreement with the analytical calculation results combined with device dimensions. This provides a theoretical basis for the design of devices in the future. Then the self-heating effect of the VLW structure with a silicon-on-oxide (SOI) substrate is compared with that of a silicon carbide (SiC) substrate by 3D thermoelectric simulation. The electrical characteristic and temperature distribution indicate that taking into account the SiC as the substrate can mitigate the self- heating penalty effectively, alleviating the self heating effect and improving reliability. |
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| Keywords: | SOI self-heating effect specific on-resistance LDMOS transistor |
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