High-power pulsed and c.w. silicon double-drift IMPATT amplifiers at X-band

The letter presents some reflection-amplifier results for Si double-drift pulsed and c.w. IMPATTs. Peak r.f. powers of up to 11.6 and 16.5 W with instantaneous (?1 dB) bandwidths ~20% at gains >6 dB have been obtained at 10 GHz with 1- and 2-diode combinations when bias modulated with a pulsewidth of 4 ?s and p.r.f. of 1 kHz. A 2-diode c.w. combination has given a power of 7 W (c.w.) at 10.7 GHz with a gain of 6.5 dB and instantaneous (?1 dB) bandwidth of 400 MHz.