| SiGe HBT器件的研究设计 |
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| 引用本文： | 米保良,吴国增.SiGe HBT器件的研究设计[J].半导体技术,2010,35(1):58-62. |
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| 作者姓名： | 米保良 吴国增 |
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| 作者单位： | 聊城大学,东昌学院,山东,聊城,252000;聊城大学,东昌学院,山东,聊城,252000 |
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| 摘 要： | 研制了一种平面集成多晶发射极SiGe HBT,并对SiGe HBT设计进行了研究分析。给出了双极晶体管的结构和关键工艺参数,并进行了流片测试,结果表明,在室温下电流增益β大于1500,最大达到3000,Vceo为5V,厄利电压VA大于10V,βVA乘积达到15000以上。这种器件对多晶Si发射极As杂质浓度分布十分敏感。
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| 关 键 词： | 锗硅异质结双极晶体管 多晶发射极 特征频率 双层多晶硅 |
Design and Study of SiGe HBT Device |
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| Mi Baoliang,Wu Guozeng.Design and Study of SiGe HBT Device[J].Semiconductor Technology,2010,35(1):58-62. |
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| Authors: | Mi Baoliang Wu Guozeng |
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| Affiliation: | School of Dongchang;Liaocheng University;Liaocheng 252000;China |
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| Abstract: | A planar integrated emitter polycrystalline silicon-germanium heterojunction bipolar transistor was developed. The design of SiGe HBT was carried out and analyzed. The bipolar transistor structure and key process parameters were studied and analyzed, and finally the tape out was tested. The results show that at room temperature current gain β is greater than 1 500, and the greatest is up to 3 000, V_(ceo) is 5 V,Overly-vohage V_A is greater than 10 V, βV_A product reaches more than 15 000. This device is very sensitive to the arsenic impurity concentration distribution of polysilieon emitter. |
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| Keywords: | SiGe HBT polycrystalline emitter characteristic frequency double-poly silicon |
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