Passivation of HgCdTe p-n diode junction by compositionally graded HgCdTe formed by annealing in a Cd/Hg atmosphere |
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Authors: | S Y An J S Kim D W Seo S H Suh |
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Affiliation: | (1) Electronic Materials and Devices Research Center, Korea Institute of Science and Technology, Cheongryang, 130-650 Seoul, Korea |
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Abstract: | Cadmium telluride (CdTe) is being widely used for passivating the HgCdTe p-n diode junction. Instead of CdTe, we tried a compositionally
graded HgCdTe as a passivation layer that was formed by annealing an HgCdTe p-n junction in a Cd/Hg atmosphere. During annealing,
Cd diffuses into HgCdTe from the Cd vapor, while Hg diffuses out from HgCdTe, forming compositionally graded HgCdTe at the
surface. The Cd mole fraction at the surface was constant regardless of the annealing temperature in the range of 250–350°C.
Capacitance versus voltage (C-V) curves for p-type HgCdTe that were passivated with compositionally graded HgCdTe formed by
Cd/Hg annealing at 260°C showed a smaller flat-band voltage than the one passivated by thermally deposited CdTe, indicative
of the better quality of the passivation. A long-wave infrared (LWIR) HgCdTe p-n junction diode passivated by compositionally
graded HgCdTe showed about a one order of magnitude smaller RdA value than the one passivated by thermally deposited CdTe, confirming the effectiveness of the compositionally graded HgCdTe
as a passivant. |
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Keywords: | HgCdTe passivation Cd/Hg |
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