| 130nm/90nm新工艺开发用的铜CMP阻挡层浆料系统 |
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| 引用本文： | ChristineYe MichaelOliver 等. 130nm/90nm新工艺开发用的铜CMP阻挡层浆料系统[J]. 半导体技术, 2003, 28(4): 47-48,57 |
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| 作者姓名： | ChristineYe MichaelOliver 等 |
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| 作者单位： | Rodel，Inc. Phoenix，AZ，Phoenix，AZ，Phoenix，AZ，Phoenix，AZ，Phoenix，AZ |
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| 摘 要： | IntroductionThe process development of copper/low-K backends is unique in the semiconductor industry. Thereare a substantial number of alternative integrationapproaches to the dual damascene copper processthat incorporates a low-K dielectric. With the multi-plicity of integration approaches and materials, therequirements on the CMP processes are highly spe-cific to each integration scheme, in particular forwhat is labeled the second step, or copper barrierCMP step.Because of the unique r…
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| 关 键 词： | 铜 CMP 阻挡层浆料系统 半导体 |
Copper CMP Barrier Slurry System for 130 nm/90 nm New Process Development |
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| Christine Ye,Michael Oliver,John Quanci,Matt VanHanehem,Ray Lavoie. Copper CMP Barrier Slurry System for 130 nm/90 nm New Process Development[J]. Semiconductor Technology, 2003, 28(4): 47-48,57 |
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| Authors: | Christine Ye Michael Oliver John Quanci Matt VanHanehem Ray Lavoie |
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