InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process |
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| Authors: | Boos J.B. Kruppa W. |
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| Affiliation: | Naval Res. Lab., Washington, DC, USA; |
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| Abstract: | The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high source-drain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6 mS/mm. For a 1.4 mu m gate length, an intrinsic transconductance of 560 mS/mm and f/sub T/ and f/sub max/ values of 16 and 40 GHz, respectively, were achieved.<> |
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