Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition |
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Authors: | Zhe Chuan Feng |
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Affiliation: | Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 106-17, Taiwan, ROC |
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Abstract: | A series of 3C-SiC films with varied film thickness up to 17 μm have been grown on Si(1 0 0) by chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance measurements. Typical key behaviors on these optical spectra are investigated. Thinner (<3 μm) films have their optical spectral features, mainly associated with defects. High quality of single crystalline cubic SiC materials can be obtained from thicker (>10 μm) films, evidenced by optical spectra. There exists a tensile stress in the 3C-SiC film grown on Si, affecting greatly the optical features. Its measurements have leaded to a formulas on two deformation potentials, a and b. |
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Keywords: | 3C-SiC Si Chemical vapor deposition Photoluminescene Raman scattering Fourier transform infrared spectroscopy |
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