Nitridation of hafnium oxide by reactive sputtering |
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| Authors: | KY Tong Emil V Jelenkovic JY Dai |
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| Affiliation: | a Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
b Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China |
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| Abstract: | Hafnium oxide films were RF sputtered from HfO2 target in Ar/O2 or Ar/N2 ambient on silicon substrates. The composition of the deposited films was analyzed by X-ray photoelectron spectroscopy (XPS). For samples sputtered in Ar/N2, it was observed that nitrogen was incorporated in the bulk of hafnium oxide films in the form of HfON, and SiON layer was formed at the silicon-insulator interface. After annealing the hafnium oxide films at 600-700 °C, MOS structures were fabricated and used for electrical characterization. The effects of nitridation of hafnium oxide on both the capacitance-voltage and current-voltage characteristics of the MOS capacitors were discussed. |
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| Keywords: | Hafnium oxide Sputtering |
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