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Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6 |
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| Authors: | Takeyasu Saito Yukihiro Shimogaki Katsuro Sugawara Shinji Nagata Hiroshi Komiyama |
| Affiliation: | a Department of Chemical System Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan b Department of Materials Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan c Department of Materials Engineering Science, Osaka University, Toyonaka-shi, Osaka 560-8531, Japan d Department of Computer Science, College of Engineering, Nihon University, Tokusada, Tamura-machi, Koriyama 963-8642, Japan e Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
| Abstract: | This paper describes reaction kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2, focusing on the effect of added H2, SiH4, and Si2H6 as an active reaction initiator. Our studies indicate that the temperature at which film formation is extinguished, Tex, can be lowered by introducing H2 instead of the standard Ar carrier gas. For a SiH2Cl2/WF6 pressure ratio of 20, H2 addition changed the deposition mode from selective W deposition to blanket WSix deposition. The added H2 also improved the step-coverage profile for substrate temperatures below 600 °C. Measured step coverage profiles indicate that the activation energy of deposition species was 147 kJ/mol. Adding either SiH4 or Si2H6 can assist the film-forming reactions to achieve acceptable Si/W atomic composition ratios. Under these conditions, the residual fluorine concentration remained at acceptably low levels that are typical of conventional WF6/SiH2Cl2 CVD processes. |
| Keywords: | 81 15 -z 81 20 -n |
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