A new design of the SiC light-activated Darlington power transistor |
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Authors: | ZM Chen HB Pu Z Lü P Ren |
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Affiliation: | Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China |
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Abstract: | A SiC light-activated Darlington heterojunction transistor is proposed for anti-EMI (electromagnetic interference) applications, in which a monolithically integrated SiCGe/SiC pn heterojunction photodiode is employed to produce a light-induced base current for triggering the transistor. Performance of the proposed light-activated power switch was simulated using MEDICI tools. Feasibility of the proposal is confirmed by its good light-activation characteristics obtained from the simulation. The simulation also demonstrates that good I-V characteristics with a light-independent turn-on voltage knee of about 5 V may be achievable to the light-activated power switch has. |
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Keywords: | SiCGe SiC Heterojunction Darlington transistor |
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