Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic |
| |
Authors: | Junghwan Lee Eunyoung Chung Dong Hack Suh |
| |
Affiliation: | a SoC Device Team, System IC R&D, Technology Division, MagnaChip Semiconductor Inc., 1, Hyangjeong-dong, Hungduk-ku, Cheongju-si 361-725, Republic of Korea b School of Chemical Engineering, College of Engineering, Hanyang University, Haengdang 1-dong, Seongdong-gu, Seoul 133-791, Republic of Korea |
| |
Abstract: | In this paper, we investigate the effect of water (H2O) molecules evolving from silicon dioxide (SiO2) film deposited by low pressure chemical vapor deposition (LPCVD) at 670 °C on the transistor characteristic of an electrically erasable programmable read only memory (EEPROM) cell. Fourier Transform Infra red (FT-IR) analysis reveals that H2O is captured during film deposition and diffused to silicon surface during high thermal processing. The diffused H2O molecules lower threshold voltage (Vt) of cell transistor and, thus, leakage current of the cell transistor is increased. In erased cell, Vt lowering is 0.25 V in which it increases leakage current of cell transistor from 1 to 100 pA. This results in the lowering of high voltage margin of a 512 Kb EEPROM from 2.8 to 2.6 V at 85 °C. |
| |
Keywords: | EEPROM Cell Vt SiO2 |
本文献已被 ScienceDirect 等数据库收录! |
|