Characterization of transient currents in HfO2 capacitors in the short timescale

We present a detailed experimental investigation of transient currents in HfO₂ capacitors in the short timescale. We show that the transient currents flowing through the capacitor plates when the gate voltage is reset to zero after a low voltage stress period follow a power-law time dependence t^−α (with α ? 1) over more than eight decades of time and down to the μs timescale. As transient currents in HfO₂ are largely increased with respect to the SiO₂ case, these results confirm that transient effects can be a severe issue for the successful integration of high-k dielectrics.