Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology

In this work, the difficult scaling of FeRAM is circumvented by fabricating 3-dimensional ferroelectric capacitors stacked on W plugs and successfully integrated in 0.18 μm technology using MOCVD SBT. The effective remnant polarization was increased by 70% due to the sidewall contribution. Also, high reliability of 3-D capacitors was assessed. The samples showed no fatigue degradation after 10¹³ ±5 V cycles. From extrapolation of both imprint and retention results, a wide sensing window is kept after 10 years in most severe temperature condition, that is at 150 °C. Critical integration issues are discussed for further scaling in 0.13 μm technology and below.