Defects analysis in self-organized nanopore arrays formed by anodization of aluminium at various temperatures

The self-organized anodization of aluminium in sulphuric acid was employed for formation of high-density nanostructures at various cell potentials and temperatures. The well-ordered arrangement of nanopores was obtained by two-step anodization process. The qualitative and quantitative analyses of defects were performed from SEM images of nanostructures. The Fourier transform (FFT) analyses showed that the uniformity of the triangular lattice increases gradually with increasing anodising potential independently of temperature. The order in the nanopore arrangement and size of well-ordered domains increase with increasing anodising potential for all studied temperatures. Quantitative analyses of defects, known as Delanuay triangulations, were performed for various anodising potentials and temperatures. The percentage of generated defects is constant at the cell potential between 15 and 23 V. At the temperature of 1 degree C, the percentage of defects equals to 20% while at temperatures of -8 or 10 degrees C reaches a value of about 30%. At the anodising potential of 25 V the percentage of generated defects in porous alumina is drastically reduced to about 10%, independently of the anodising temperature. The perfect nanopore arrangement on the anodised surface with the smallest number of defects can be obtained at 25 V.