| 真空蒸馏法从铟中脱除Cd、Tl的研究 |
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| 引用本文： | 邓勇,杨斌,杜国山,刘大春,徐宝强. 真空蒸馏法从铟中脱除Cd、Tl的研究[J]. 云南化工, 2007, 34(1): 37-39,43 |
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| 作者姓名： | 邓勇 杨斌 杜国山 刘大春 徐宝强 |
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| 作者单位： | 昆明理工大学,真空冶金国家工程实验室,云南,昆明,650093 |
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| 摘 要： | 介绍真空蒸馏法取代传统试剂法从铟中脱除镉和铊。通过实验研究了采用真空蒸馏的方法从铟中脱除铊的最佳工艺条件。实验表明,控制蒸馏温度950℃,恒温时间40m in,即可使残余物中铊的含量为0.0006%,铟的挥发率2.14%。
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| 关 键 词： | 铟 真空蒸馏 提纯 |
| 文章编号： | 1004-275X（2007）01-0037-03 |
| 修稿时间： | 2006-11-07 |
Removal of Cd and TI from Indium by Vacuum Distillation |
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| Deng Yong,Yang Bin,Du Guoshan,Liu Dachun,Xu Baoqiang. Removal of Cd and TI from Indium by Vacuum Distillation[J]. Yunnan Chemical Technology, 2007, 34(1): 37-39,43 |
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| Authors: | Deng Yong Yang Bin Du Guoshan Liu Dachun Xu Baoqiang |
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| Affiliation: | National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093, China |
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| Abstract: | Removal of Cd and TI from indium by vacuum distillation was introduced,and the optimal condition was chosen.Content of thallium in the residue could be lowered to 0.0006%,whereas the evaporation rate of indium was 2.14% when distillated at 950℃ for 40 min. |
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| Keywords: | indium vacuum instillation purification |
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