Low threshold current density 1.3 /spl mu/m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy |
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| Authors: | Chang FY Lee JD Lin HH |
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| Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan; |
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| Abstract: | InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy (MBE) are reported. The laser emits 1.296 /spl mu/m light output and demonstrates a very low threshold current density of 111 A/cm/sup 2/. This is the lowest reported value of GaAs-based 1.3 /spl mu/m quantum dot lasers with InGaP cladding layers. |
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