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A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology |
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| Authors: | Song Zhitang Zhan YiPeng Cai Daolin Liu Bo Chen Yifeng Ren Jiadong |
| Affiliation: | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People’s Republic of China ;2.Semiconductor Manufacturing International Corporation, Shanghai, 201203, People’s Republic of China ; |
| Abstract: | Nano-Micro Letters - In this letter, a phase change random access memory (PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide... |
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