A Chemical thinning technique for transmission electron microscopy cross-sectional samples |
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| Authors: | R. J. Gaboriaud |
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| Affiliation: | (1) California Institute of Technology, 91125 Pasadena, California;(2) Present address: Laboratoire de Metallurgie PhysiqueFaculte des Sciences, 40, Avenue du Recteur Pineau, 86022 POITIERS, France |
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| Abstract: | An essentially chemical thinning method for cross-sectional electron microscopy samples is described. This method can give cross-sectional samples in less than three hours without ion milling. This technique has been applied to a silicon wafer that had been amorphized by ion implantation and then partially annealed. An amorphous silicon layer as thin as 200 A was observed. |
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| Keywords: | T.E.M. Thinning technique Cross-section |
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