Point Defects in CdZnTe Crystals Grown by Different Techniques |
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| Authors: | R Gul A Bolotnikov H K Kim R Rodriguez K Keeter Z Li G Gu R B James |
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| Affiliation: | (1) Department of Physics and Astronomy, University of Glasgow, Kelvin Building, G12 8QQ Glasgow, UK |
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| Abstract: | We studied, by current deep-level transient spectroscopy (I-DLTS), point defects in CdZnTe detectors grown by different techniques.
We identified 12 different traps with energy levels from 7 meV to 1.1 eV. Although the levels of most of the identified defects
were independent of the crystal growth techniques, nevertheless there were some associated differences in the traps’ energies
and densities. |
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